for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 66 hmc474sc70 / 474SC70E sige hbt gain block mmic amplifier, dc - 6 ghz v00.0607 general description functional diagram the hmc474sc70(e) is a general purpose sige heterojunction bipolar transistor (hbt) gain block mmic smt ampli er covering dc to 6 ghz. this industry standard sc70 packaged ampli er can be used as a cascadable 50 ohm rf/if gain stage with up to +8 dbm output power. the hmc474sc70(e) offers 15 db of gain with a +20 dbm output ip3 at 850 mhz while requiring only 25 ma from a single positive supply as low as +3v. the darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components. gain: 15 db p1db output power: +8 dbm output ip3: +20 dbm cascadable 50 ohm i/os single supply: +3v to +10v industry standard sc70 package typical applications the hmc474sc70(e) is an ideal for: ? cellular / pcs / 3g ? wibro / wimax / 4g ? fixed wireless & wlan ? catv, cable modem & dbs ? microwave radio & test equipment electrical speci cations, vs= 5v, rbias= 110 ohm, t a = +25 c parameter min. typ. max. units gain dc - 2.0 ghz 2.0 - 4.0 ghz 4.0 - 6.0 ghz 12 10 7 15 13 10 db db db gain variation over temperature dc - 6 ghz 0.01 0.015 db/ c input return loss dc - 5 ghz 5.0 - 6.0 ghz 15 14 db db output return loss dc - 5 ghz 5.0 - 6.0 ghz 15 12 db db reverse isolation dc - 6 ghz 17 db output power for 1 db compression (p1db) 0.5 - 4.0 ghz 5.0 - 6.0 ghz 5 3 8 6 dbm dbm output third order intercept (ip3) (pout= 0 dbm per tone, 1 mhz spacing) dc - 5 ghz 5.0 - 6.0 ghz 20 18 dbm dbm noise figure dc - 5 ghz 5.0 - 6.0 ghz 3 3.9 db db supply current (icq) 25 33 ma note: data taken with broadband bias tee on device output. features
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 67 output return loss vs. temperature broadband gain & return loss gain vs. temperature reverse isolation vs. temperature input return loss vs. temperature noise figure vs. temperature hmc474sc70 / 474SC70E sige hbt gain block mmic amplifier, dc - 6 ghz v00.0607 -25 -20 -15 -10 -5 0 5 10 15 20 012345678 s21 s11 s22 response (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0123456 +25 c +85 c -40 c return loss (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 0123456 +25 c +85 c -40 c return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 0123456 +25 c +85 c -40 c reverse isolation (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 0123456 +25 c +85 c -40 c gain (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 0123456 +25 c +85 c -40 c noise figure (db) frequency (ghz)
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 68 gain, power & oip3 vs. supply voltage for rs= 110 ohms @ 850 mhz p1db vs. temperature psat vs. temperature output ip3 vs. temperature icc vs. vcc over temperature for fixed vs= 5v, r bias = 110 ohms hmc474sc70 / 474SC70E sige hbt gain block mmic amplifier, dc - 6 ghz v00.0607 0 2 4 6 8 10 12 14 16 0123456 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 0 2 4 6 8 10 12 14 16 0123456 +25 c +85 c -40 c psat (dbm) frequency (ghz) 10 12 14 16 18 20 22 24 26 0123456 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 4.75 5 5.25 gain p1db psat oip3 gain (db), p1db (dbm), psat (dbm), oip3 (dbm) vs (vdc) 20 21 22 23 24 25 26 27 28 2 2.1 2.2 2.3 2.4 2.5 2.6 icc (ma) vcc (v) +85 c +25 c -40 c
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 69 outline drawing absolute maximum ratings collector bias voltage (vcc) +6.0 vdc collector bias current (icc) 35 ma rf input power (rfin)(vcc = +2.4 vdc) +5 dbm junction temperature 150 c continuous pdiss (t = 85 c) (derate 4.3 mw/c above 85 c) 0.280 w thermal resistance (junction to lead) 232 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c esd sensitivity (hbm) class 1b part number package body material lead finish msl rating package marking hmc474sc70 low stress injection molded plastic sn/pb solder msl1 [1] 474 hmc474SC70E rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 474 [1] max peak re ow temperature of 235 c [2] max peak re ow temperature of 260 c package information electrostatic sensitive device observe handling precautions hmc474sc70 / 474SC70E sige hbt gain block mmic amplifier, dc - 6 ghz v00.0607 notes: 1. package body material: low stress injection molded plastic silica and silicon impregnated. 2. lead material: copper alloy 3. lead plating: sn/pb solder 4. dimensions are in inches [millimeters]. 5. dimension does not include moldflash of 0.15mm per side. 6. dimension does not include moldflash of 0.25mm per side. 7. all ground leads must be soldered to pcb rf ground.
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 70 application circuit pin descriptions pin number function description interface schematic 1, 2, 4, 5 gnd these pins must be connected to rf/dc ground. 3rfin this pin is dc coupled. an off chip dc blocking capacitor is required. 6 rfout rf output and dc bias (vcc) for the output stage. recommended component values for key application frequencies component frequency (mhz) 50 900 1900 2200 2400 3500 5200 5500 l1 270 nh 56 nh 18 nh 18 nh 15 nh 8.2 nh 6.8 nh 3.3 nh c1, c2 0.01 f 100 pf 100 pf 100 pf 100 pf 100 pf 100 pf 100 pf note: 1. external blocking capacitors are required on rfin and rfout. 2. r bias provides dc bias stability over temperature. recommended bias resistor values for icc= 25 ma, rbias= (vs - vcc) / icc supply voltage (vs) 3v 5v 6v 8v 10v r bias v alue 30 110 150 240 300 r bias p ower r ating 1/8 w 1/8 w 1/4 w 1/2 w 1/2 w hmc474sc70 / 474SC70E sige hbt gain block mmic amplifier, dc - 6 ghz v00.0607
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com driver & gain block amplifiers - smt 9 9 - 71 evaluation pcb the circuit board used in the nal application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appropriate heat sink. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 117596 [1] item description j1 - j2 pcb mount sma connector j3 - j4 dc pin c1 - c3 100 pf capacitor, 0402 pkg. c4 1000 pf capacitor, 0603 pkg. c5 2.2 f capacitor, tantalum r1 110 ohm resistor, 1210 pkg. l1 18 nh inductor, 0603 pkg. u1 hmc474sc70(e) pcb [2] 117360 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 hmc474sc70 / 474SC70E sige hbt gain block mmic amplifier, dc - 6 ghz v00.0607
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